DEVICE FOR MEASURING CHARACTERISTICS OF SEMICONDUCTORS Russian patent published in 1994 - IPC

FIELD: instrumentation engineering. SUBSTANCE: introduction of new units allows antiphase voltage with a constant amplitude to be applied to the second terminal, and analog processing of signals in compensation conditions to be carried out. This allows the stability of operation of negative feedback to be enhanced to maintain a constant current through the capacitance under measurement, the testing voltages across the specimen to be decreased, and the range of quality factors under measurement to be expanded. Introduction of the compensating circuit in the concentration measuring channel allows the accuracy of measurement of the deep level parameters to be enhanced, and automatic measurements of distribution of deep level concentration in depth to be carried out. EFFECT: facilitated procedure and enhanced accuracy. 1 dwg