FIELD: radio electronics. SUBSTANCE: process includes formation of dielectric layers based on barium titanium with addition of barium oxide, conductive oxide layers and annealing. While forming dielectric layers ceramics is additionally injected with LiF with following proportion of components in ceramics, per cent by mass: BaTiO3 94.45-98.95; LiF 1.00-2.00; BaO 0.05-2.55. Cadmium oxide is used as oxide for current conducting ceramic layers. Annealing is performed at 10-20-1080 C. EFFECT: increased dielectric permittivity of capacitor with simultaneous provision for replacement of electric from noble metals with those of ceramics, reduced sintering temperature. 2 tbl
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