TRANSISTOR KEY WITH OVERLOAD PROTECTION Russian patent published in 1995 - IPC

Abstract RU 2035841 C1

FIELD: pulse equipment. SUBSTANCE: transistor key has two keys of different types of conductance forming thyristor structure, two controlling transistors, capacitor, two diodes and five resistors. EFFECT: enhanced operational characteristics. 1 dwg

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RU 2 035 841 C1

Authors

Miljushin Nikolaj Nikolaevich

Dates

1995-05-20—Published

1993-01-11—Filed