TWO-POLE POWER AMPLIFIER Russian patent published in 2002 - IPC

FIELD: radio engineering; radars, radio communications, and other industries. SUBSTANCE: high-power microwave amplifier stage has amplifying component, transistor, single-pole input and output circuits for matching amplifying component with field source resistor and load in first frequency channel band. Connected to each input circuit and/or to single-band matching output circuit is additional filter circuit. In first second frequency channel band the latter has rather high input resistance; in second frequency channel band it ensures, jointly with single-strip first frequency channel matching circuit components, matching between amplifying component output and load impedance and between its input resistance and field source impedance; this is attained without essential mismatch in first frequency channel band. Input resistance of additional filter circuit in first frequency channel band should be high enough to eliminate impact of additional filter circuit on this channel. EFFECT: ability of microwave amplifier stage operation in two frequency channels spaced apart. 3 cl, 4 dwg