LOW CURRENT CONSUMPTION SELECTIVE AMPLIFIER FOR SiGe TECHNOLOGICAL PROCESSES Russian patent published in 2014 - IPC H03F3/45 

FIELD: radio engineering, communication.

SUBSTANCE: invention relates to radio engineering. The device has first and second input transistors, emitters of which are connected through a first current-stabilising two-terminal element to a first power supply bus, an input voltage source connected to the base of the second input transistor, first and second frequency-setting resistors, a first balancing capacitor, wherein the collector of the first input transistor is connected to a second power supply bus. The collector of the second input transistor is connected to the second power supply bus through the first frequency-setting resistor and is connected through alternating current to the second power supply bus through series-connected first and second additional balancing capacitors, the common node of which is connected to the output of the device and the base of the first input transistor, wherein the base of the first input transistor is connected through alternating current to the common power supply bus through the second frequency-setting resistor.

EFFECT: high Q-factor of the amplitude-frequency curve of the selective amplifier and voltage gain (K₀) at quasi-resonance frequency f₀.

8 dwg