MICROSTRIP SHF DIPLEXER Russian patent published in 2014 - IPC H01P1/06 H01P1/213 

FIELD: radio engineering, communication.

SUBSTANCE: diplexer contains a multi-layered dielectric substrate, consisting of at least three layers, lower and upper metallic screening layers. The diplexer also contains two bandpass filters on parallel half-wave resonators. The edge resonators of the first filter electrically connected to an input and the first output ports with pieces of matching lines, and the edge resonators of the second filter are electrically connected to the input and the second output ports. Odd and even half-wave resonators of both filters are located at different sides of the substrate medium layer, and open conductor ends of the adjacent resonators of each filter are located above each other. The pairs of the first and the second filter resonators' conductors intersect in medium points, and the matching line pieces are located on the different sides of the substrate medium layer as compared to the edge resonators of the filters. The conductor width and the dielectric substrate layer width values can be selected so that to minimise losses in the diplexer.

EFFECT: signal loss reduction.

3 cl, 2 dwg