HIGH-FREQUENCY ATTENUATOR Russian patent published in 2014 - IPC H01P1/22 

FIELD: radio engineering, communication.

SUBSTANCE: high-frequency attenuator has a device input and output with a first resistor connected in between, an input voltage source connected by alternating current between a common bus and the device input, a second resistor connected by alternating current between the device output and the common bus, an equivalent load capacitance connected by alternating current between the device output and the common bus. The circuit includes a balancing capacitor connected between the device input and the input of an additional non-inverting current amplifier, the current output of which is connected to the device output.

EFFECT: wider operating frequency range of the device and faster operation thereof when working with high-amplitude pulsed signals.

2 cl, 9 dwg