SHF DIPLEXER Russian patent published in 2023 - IPC H01P1/203 

FIELD: SHF technology; diplexers.

SUBSTANCE: diplexer contains a dielectric substrate, on one side of which a grounded base is applied, and on the other side strip conductors of the resonators and matching circuit are applied. The resonators form filters for the low-frequency and high-frequency channels, and the input resonators of the channels are electromagnetically connected to the matching circuit. In each of the bandpass filters, the middle resonator is positioned such that the inner edge of its conductor near one open end faces the inner edge of the input resonator, and the inner edge of its conductor near the other open end faces the inner edge of the output resonator, and the inner edge of the input resonator conductor of the filter high-frequency channel faces the inner edge of the matching circuit conductor near their open ends.

EFFECT: reduced diplexer dimensions.

1 cl, 2 dwg