LOGIC ELEMENT EMPLOYING FIELD-EFFECT TRANSISTORS Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: logic element uses transfer transistor 1, level shift diodes 2, current source using load transistor 3. Due to introduction of transistors 8, 9 and diode 10 forming together with transistor 3 a differential stage, the current of the current source decreases at the positive front of the input signal and increases at the negative front of the input signal. This provides for an increase of current given off to load and respectively decreases the time of recharge of the load capacitor. EFFECT: enhanced speed of response and voltage gain of logic element. 2 dwg