OHMIC LEVEL GAGE (VERSIONS) Russian patent published in 1994 - IPC

Abstract RU 2020427 C1

FIELD: level gages. SUBSTANCE: device of first version has four flat electrodes, two power supply sources, two measuring instruments and computing unit. Electrodes are located on sides of square. Device of second version has three flat electrodes, power source, two measuring instruments and computing unit. Electrodes are located on sides of equilateral triangle. EFFECT: higher efficiency. 5 cl, 7 dwg

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RU 2 020 427 C1

Authors

Кrasnov Ivan Аfanas'Evich

Sakharov Vladimir Vasil'Evich

Gurin Jurij Мikhajlovich

Тatchikhin Еvgenij Vasil'Evich

Dates

1994-09-30Published

1991-12-05Filed