PROCESS OF MANUFACTURE OF BIPOLAR N-P-N TRANSISTOR Russian patent published in 1994 - IPC

Abstract RU 2025824 C1

FIELD: microelectronics. SUBSTANCE: ions of phosphorus with energy 100 ± 20 keV are implanted after creation of active regions and formation of ohmic contacts in process of manufacture of bipolar n-p-n transistor. It is followed by postimplantation burning and passivation of structures. EFFECT: facilitated manufacture of n-p-n transistors. 1 dwg

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RU 2 025 824 C1

Authors

Tsareva L.G.

Dates

1994-12-30—Published

1990-08-16—Filed