BIPOLAR PLANAR N-P-N TRANSISTOR MANUFACTURING PROCESS Russian patent published in 1998 - IPC

FIELD: semiconductor microelectronics. SUBSTANCE: prior to applying double-layer insulating coat onto substrate surface, the latter is covered with single-layer silicon oxide which is partially removed by means of photoresist mask; ion doping is effected during first stage of base region formation before applying double-layer insulating coat, the latter is removed at points of formation of emitter and base contacts; second stage of base region formation is carried out by boron diffusion in oxidizing atmosphere with silicon oxide formed on structure surface; then remaining double-layer coat is removed; points of base contacts formation on surface are protected by photoresist mask, and substrate is doped with impurity of type opposite to that of main impurity in base followed by removal of photoresist and annealing of structure to form emitter region. EFFECT: facilitated procedure. 3 cl, 4 dwg