METHOD OF DETERMINATION OF RESISTANCE OF POWER SEMICONDUCTOR DEVICES TO ACTION OF MICROSECOND PULSES OF FORWARD CURRENT Russian patent published in 1995 - IPC

Abstract RU 2028004 C1

FIELD: electrical engineering. SUBSTANCE: method is intended for check and measurement of critical values of forward current of power semiconductor devices. Pulse of power current is let through tested device and parameter of device interrelated to current is checked simultaneously fixing is this case value of power current as measured parameter. Pulse of power current is let through before moment when differential inductance of device reaches minimal value. EFFECT: authenticity of determination, simplified method. 4 dwg

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RU 2 028 004 C1

Authors

Gamajunov A.V.

Kurmashev S.M.

Palenik V.I.

Toomla Olaf Karlovich

Dates

1995-01-27Published

1991-02-25Filed