FIELD: measuring equipment.
SUBSTANCE: invention relates to technique for measuring thermal parameters of semiconductor devices of power electronics and can be used for rapid assessment of thermal inertia of device, its thermal resistance and quality control. Essence: power semiconductor device (SPP) is heated by current of arbitrary shape flowing through it to steady state of thermal state. Current is then turned off and temperature of temperature-sensitive parameter is continuously measured during device cooling. Temperature-sensitive parameter is measured by time when heating current is turned off until temperature-sensitive parameter reaches predetermined value. Due time interval value, thermal inertia and thermal resistance of power semiconductor device are estimated.
EFFECT: reduction of measurement time, simplification of technical implementation of devices for measuring thermal parameters of NGN, providing ability to perform non-destructive rejection of potentially unreliable samples.
1 cl, 1 dwg
