FIELD: electronic industry; memory devices. SUBSTANCE: device has a storage unit divided into submatrices having memory cells, 2AND-OR gates of the first and the second groups, the first and the second scanning and masking units, the first and the second address registers, the first and the second response recording registers, storage submatrix retrieval and submatrix fragment address register. EFFECT: enhanced flexibility in reconfiguring associative memory in writing, reading and carrying out associative retrieval in rows, columns, columns and rows of given fragments of selected submatrices in the storage. 9 dwg
Title | Year | Author | Number |
---|---|---|---|
ASSOCIATIVE STORAGE | 1992 |
|
RU2025796C1 |
ASSOCIATIVE MEMORY MATRIX | 1993 |
|
RU2065207C1 |
0 |
|
SU1785039A1 | |
ASSOCIATIVE MEMORY DEVICE | 0 |
|
SU1824650A1 |
ASSOCIATIVE MEMORY DEVICE | 0 |
|
SU1793475A1 |
ASSOCIATIVE MEMORY | 0 |
|
SU1718274A1 |
ASSOCIATIVE STORAGE | 1991 |
|
RU2045787C1 |
ASSOCIATIVE STORAGE | 0 |
|
SU1805499A1 |
ASSOCIATIVE MEMORY | 0 |
|
SU1833917A1 |
HIERARCHICAL SYSTEM OF ASSOCIATIVE STORAGE | 1992 |
|
RU2025795C1 |
Authors
Dates
1995-06-19—Published
1993-01-18—Filed