DEVICE FOR CONTROL OF REGENERATION IN SEMICONDUCTOR DYNAMIC MEMORY UNIT Russian patent published in 1995 - IPC

Abstract RU 2040808 C1

FIELD: computer engineering. SUBSTANCE: device has first and second clocks 1 and 2, first and second flip-flops 3 and 4, first and second bus shapers 5 and 6, local control unit 7, counters 8, decoder 9, encoder 10, register 11, AND gate 12, OR gate 13, regeneration rate control unit 32, detecting group 33 for measuring parameters of external fields. EFFECT: increased functional capabilities. 2 dwg

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RU 2 040 808 C1

Authors

Samkharadze Tamazi Georgievich

Dates

1995-07-25Published

1994-04-22Filed