METHOD OF PREPARING ALUMINIUM NITRIDE Russian patent published in 1997 - IPC

Abstract RU 2074109 C1

FIELD: production of inorganic compounds. SUBSTANCE: aluminium(III) fluoride is charged onto the surface of molten aluminium metal and, as the former is dipping, its reaction with aluminium occurs resulting in formation of volatile aluminium(I) fluoride. The latter reacts in gaseous phase with nitrogen-containing gas to yield aluminium nitride followed by isolation thereof from gaseous phase. Resultant product is destined to be used in manufacture of radioelectronic components. EFFECT: increased capacity of main equipment. 2 cl, 1 tbl

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RU 2 074 109 C1

Authors

Afonin Ju.D.

Beketov A.R.

Proskurjakov L.D.

Zhukova L.M.

Rjabov V.P.

Dates

1997-02-27—Published

1995-05-30—Filed