FIELD: chemical technology.
SUBSTANCE: method involves load of charge consisting of solid aluminum and aluminum (III) fluoride into tube furnace. Charge is heated to 1000-1300C to obtain aluminum fluoride (I) that is subjected then to interaction with nitrogen, ammonia or other nitrogen-containing gas on surface of this charge under atmosphere pressure, and wherein gas is fed toward to charge moving. Method provides preparing finely dispersed aluminum fluoride powder of high purity, enhancing coefficient of using aluminum (III) fluoride and enhanced economy of the process. Invention can be used in microelectronics.
EFFECT: improved preparing method.
1 tbl
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Authors
Dates
2007-12-10—Published
2005-01-28—Filed