HIGH-VOLTAGE GATE Russian patent published in 1997 - IPC

FIELD: pulse devices, in particular, direct current modulators and regulators. SUBSTANCE: device has serial circuit of aiding thyristors. Voltage scaling circuit, which is connected in parallel to each thyristor, has high-resistance resistor and low-resistance resistor. Point of connection of these resistor is connected to control electrode of thyristor through low-resistance resistor. It also is connected to connection point of pair of adjacent diodes of diode column, which is designed as serial circuit of aiding diodes and is connected in parallel opposing to thyristor circuit. An additional diode may be inserted between input terminal and anode of last thyristor in order to prevent feeding of back voltage. EFFECT: increased functional capabilities. 2 cl, 1 dwg