HIGH-VOLTAGE GATE Russian patent published in 1998 - IPC

Abstract RU 2123234 C1

FIELD: pulse equipment, in particular, modulators and regulators of direct current. SUBSTANCE: device has serial circuit of thyristors. Equalizing voltage divider is connected in parallel to each thyristor starting from second one. It is designed as equalizing high-resistance resistor and low-resistance resistor. Connection point of these resistors is connected to control electrode of corresponding thyristor and connection point of each pair of diodes in diode circuit consisting of aiding diodes. Diode circuit is connected in parallel and opposing to thyristor circuit. Gate has at least one circuit which has stabilizing diode, which anode is connected to global bus. Its cathode is connected through high- resistance resistor to low-resistance resistor of first voltage divider which is connected in parallel to stabilizing diode of capacitor and diode. Anode of diode is connected to cathode of stabilizing diode. Its cathode is connected to connection point of first pair of diodes of diode circuit. Control bus is connected to control electrode of first thyristor. EFFECT: simplified design, decreased size and cost. 1 dwg

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RU 2 123 234 C1

Authors

Shmyrev Vladislav Vasil'Evich

Kolchemanov Nikolaj Aleksandrovich

Dates

1998-12-10Published

1996-01-30Filed