INSTALLATION FOR PRODUCING SILICON NITRIDE Russian patent published in 1997 - IPC

Abstract RU 2091299 C1

FIELD: chemical engineering. SUBSTANCE: invention concerns ampoules where successive conversion of silicon oxide proceeds involving electric-pulse disintegration and conversion to dispersed silicon whose particles may completely react with nitrogen at high pressure and temperature. The ampoules are disposed in thermostatically controlled chambers of rotor-conversion line and have coils of constant and electric magnets providing formation of electric-discharge field capable to entirely disintegrate initial material. EFFECT: reduced cost and improved quality of product. 2 dwg

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RU 2 091 299 C1

Authors

Melikov Eh.N.

Andreev V.A.

Dates

1997-09-27Published

1994-09-30Filed