SILICON SLAB PRODUCING APPARATUS (FURNACE) Russian patent published in 2000 - IPC

FIELD: metallurgy, in particular, production of silicon slabs for manufacture of solar energy-to-electric energy photoconverters. SUBSTANCE: apparatus has chamber filled with inert gas and source for local heating and melting of silicon. Heating and melting source is positioned within chamber for displacement in vertical plane from the bottom to the top and vice versa. Chamber is made in the form of graphite or metal pipe with cylindrical inner and outer surfaces covered with layer of refractory, thermal and electrical insulation. Graphite crucible with cover is positioned within pipe on metal support, which is fixed on axially mounted metal rod for moving up and down. Burden is charged into graphite crucible for melting and producing silicon slab. Flow of inert gas is supplied into space between graphite crucible and graphite pipe. Electric arc is generated in inert gas medium between upper end of pipe and graphite crucible for heating and melting of burden. Electric arc is supplied with direct or alternating current. EFFECT: simplified construction, increased efficiency and improved quality of silicon slabs. 7 cl, 1 dwg