FIELD: computer engineering. SUBSTANCE: in preferable embodiment, device has first layer 100 of Pb(1-x-y)CdxFey and second layer 110 of Cr(1-z-w)ZnzTew, where x, y, z and w are within following range: 
. In addition, each layer (100, 110) contains Bi, O and S elements. Resulted memory unit provides random access, is nonvolatile and operates in static mode. EFFECT: increased speed, decreased power consumption, possibility to store information with high storage density. 95 cl, 14 dwg
