FIELD: data storage and retrieval. SUBSTANCE: device has substrate, data storage layer on substrate, and source of spin-polarized electrons. Data storage layer has definite number of magnetic-material atomic layers possessing magnetic anisotropy. Data are stored in layer by feeding spin-polarized electrons whose magnetic field polarization is aimed at one of two data values; electron characteristic is that of non-coupled electrons in data storage layer which sets up magnetic moment of material. Data are read out of data storage layer by aiming spin-polarized electron of second wavelength at data magnetic field and determining deviation or by attracting spin-polarized electron with aid of data magnetic field. As an alternative, magnetic medium builds up secondary electron whose characteristics are used for data reading. EFFECT: improved storage capacity and data access speed. 17 cl, 13 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD OF OBTAINING PULSED ELECTRON BEAM | 0 |
|
SU1624713A1 |
SPIN DETECTOR OF FREE ELECTRONS ON BASIS OF SEMICONDUCTOR HETEROSTRUCTURES | 2016 |
|
RU2625538C1 |
MAGNETIC MEMORY ELEMENT | 2011 |
|
RU2585578C2 |
MAGNETIC RECORDING ELEMENT | 2011 |
|
RU2595588C2 |
OPTICAL HYPERPOLARISATION BASED ON LIGHT WITH OPTICAL ANGULAR MOMENTUM | 2011 |
|
RU2565337C2 |
SPIN DETECTING DEVICE FOR MEASURING SPIN VECTOR COMPONENT PREDOMINANT IN PARTICLE BEAM | 2011 |
|
RU2579186C2 |
AC AND DC OPTICAL LABORATORY METER | 2019 |
|
RU2720187C1 |
OPTICAL AC MEASURING DEVICE | 2016 |
|
RU2620927C1 |
COMPOSITION OF MATERIAL OF MEMORY DEVICE, METHOD OF MANUFACTURING THEREOF, ENERGY-DEPENDENT MEMORY DEVICE, METHOD OF MANUFACTURING THEREOF, METHOD OF MEMORIZING AND REPRODUCING TWO INDEPENDENT BITS OF BINARY DATA IN ONE MEMORY CELL OF ENERGY-DEPENDENT MEMORY DEVICE | 1993 |
|
RU2124765C1 |
NUCLEAR MAGNETIC RESONANCE (NMR) DOWNHOLE TOOL WITH SELECTIVE AZIMUTH | 2014 |
|
RU2618241C1 |
Authors
Dates
2000-07-27—Published
1995-09-21—Filed