DATA STORAGE METHOD AND DEVICE USING SPIN-POLARIZED ELECTRONS Russian patent published in 2000 - IPC

Abstract RU 2153706 C2

FIELD: data storage and retrieval. SUBSTANCE: device has substrate, data storage layer on substrate, and source of spin-polarized electrons. Data storage layer has definite number of magnetic-material atomic layers possessing magnetic anisotropy. Data are stored in layer by feeding spin-polarized electrons whose magnetic field polarization is aimed at one of two data values; electron characteristic is that of non-coupled electrons in data storage layer which sets up magnetic moment of material. Data are read out of data storage layer by aiming spin-polarized electron of second wavelength at data magnetic field and determining deviation or by attracting spin-polarized electron with aid of data magnetic field. As an alternative, magnetic medium builds up secondary electron whose characteristics are used for data reading. EFFECT: improved storage capacity and data access speed. 17 cl, 13 dwg

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RU 2 153 706 C2

Authors

Tomas D. Khart

Skott A. Khehlpajn

Dates

2000-07-27Published

1995-09-21Filed