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2 179 951

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IPC

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Application

2000117564/12, 2000-07-03

(24)

Start date

2000-07-03

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Actual filing date

2000-07-03

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Published

2002-02-27

(72)

Inventor

Ol'Shanskij V.A.Krupin A.G.

(73)

Holder

Federal'Noe Gosudarstvennoe Unitarnoe Predprijatie Khimicheskij Kombinat" Ministerstva Rossijskoj Federatsii Po Atomnoj Ehnergii

METHOD OF PREPARING SILICON DIOXIDE Russian patent published in 2002 - IPC

Abstract RU 2179951 C1

FIELD: technology of preparing silicon dioxide with developed specific surface. SUBSTANCE: silicon dioxide is prepared by adding hydrofluoric or fluosilicic acid to sodium metasilicate solution containing sodium fluoride impurity. pH value is varied from 10.5-11.0 to 4.0-6.5 and is then corrected to 8.9-9.1 by addition of sodium metasilicate solution so that total concentration of ion fluoride does not exceed 1 m/l in the resulting suspension. Process temperature is 80-100 C. The resulting silicon dioxide has developed specific surface of at least 50 square m per g and high filterability. EFFECT: more efficient preparation method. 1 tbl

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RU 2 179 951 C1

Authors

Ol'Shanskij V.A.

Krupin A.G.

Dates

2002-02-27—Published

2000-07-03—Filed

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