FIELD: chemical gaseous deposition of film on article surface. SUBSTANCE: method involves generating plasma in gaseous hydrocarbon and exposing substrate to plasma having electron density not in the excess of 5×1010 per cu.cm and enclosure thickness less than 2 mm at high ion current density and controllable low-energy ion bombardment. Ion current density selected is at least 20 A/sq. m and substrate bias voltage in the range of from 100 V to 1,000 V. Article has substrate with angular surface and diamond-like carbon film with hardness of at least 20 HPa. Film is free from distinctive grains having diameter of at least , when examined with 50,000-fold increase by means of scanning cold-emission microscope. EFFECT: increased deposition rate and improved quality of film having dense structure and increased hardness. 19 cl, 18 dwg, 6 tbl, 2 ex
Authors
Dates
2003-06-10—Published
1998-06-11—Filed