FIELD: semiconductor engineering; measuring electrostatic potential distribution over semiconductor surface.
SUBSTANCE: proposed proximate-analysis method that enables recording of surface potential distribution over flat surfaces of various materials involves following procedures. Flat electrode is rotated at fixed distance from specimen surface. Current induced in capacitor circuit set up by specimen and electrode is converted into voltage by means of integrating amplifier. Voltage is supplied to input of oscilloscope whose oscillogram illustrates distribution of surface electrostatic potential along rotating electrode path.
EFFECT: ability of recording surface potential distribution without impact on electronic condition of surface being investigated.
1 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR MEASURING OF ALTERATION OF SURFACE POTENTIAL | 1999 |
|
RU2156983C1 |
| METHOD FOR OBSERVATION OF SURFACE CHARGE DENSITY AND ITS MIDDLE POSITION IN FLAT DIELECTRICS | 2004 |
|
RU2287835C2 |
| METHOD FOR MEASUREMENT OF PARAMETERS RESIDUAL CHARGE OF FLAT DIELECTRICS | 2003 |
|
RU2231804C1 |
| DEVICE FOR MEASUREMENT OF ELECTRIC POTENTIAL OF CHARGED SURFACE | 0 |
|
SU1798736A1 |
| METHOD OF MEASUREMENT OF SURFACE DENSITY OF TOTAL CHARGE IN FLAT DIELECTRICS | 2005 |
|
RU2298199C1 |
| METHOD FOR DETERMINING THE CHARGE SURFACE DENSITY OF PLANE DIELECTRICS | 2004 |
|
RU2260811C1 |
| METHOD OF DETERMINING CHARGE DENSITY IN DIELECTRICS | 0 |
|
SU1471152A1 |
| METHOD FOR MEASURING OF DIELECTRIC PENETRABILITY OF LIQUID AND FLAT SOLID DIELECTRICS | 2006 |
|
RU2303787C1 |
| METHOD TO DETECT CONTACT DIFFERENCE OF POTENTIALS AND RELATED DEVICE | 2011 |
|
RU2471198C1 |
| METHOD FOR LOCAL MEASURING RESISTIVITY OF SEMICONDUCTORS AND DEVICE FOR IMPLEMENTATION OF SAID METHOD | 0 |
|
SU1822972A1 |
