FIELD: inorganic synthesis.
SUBSTANCE: invention is directed to preparation of gallium nitride powder that could be used as ceramics component when manufacturing semiconductor members of structures. Method of preparing ultrafine gallium nitride powder comprises combusting mixture of powdered gallium-containing compound with high-exothermic pulverized metal in a gas medium, said gallium-containing compound being liquid gallium metal or gallium oxide and said high-exothermic pulverized metal being aluminum, while, as gas medium for combustion, atmospheric air is used. Thus obtained ultrafine gallium nitride powder, in order to complete removal of impurities, is further subjected to chemical treatment in hydrochloric or sulfuric acid solutions followed by washing with distilled water.
EFFECT: simplified gallium nitride powder synthesis technology and enabled utilization of air as nitrogen-containing reagent.
1 tbl, 2 ex
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