FIELD: measuring techniques.
SUBSTANCE: device has a semiconductor pressure sensor mounted inside a case. Detectors and membrane on which pressure is incident are located on the first side of the case, while on the reverse side of the first, there is a cavity which runs up to the membrane. The pressure sensor is directly soldered to the structural part of the device. The first part of the pressure transmission channel and the cavity are connected. The through hole on the first side of the case is covered by a connecting pipe. The structural part inside the case is connected to the connection pipe through the through hole.
EFFECT: measurement of high pressure exceeding 70 bars.
13 cl, 6 dwg
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