METHOD FOR PREPARATION OF POLYCRYSTALLINE HIGH-PURITY SILICON AND DEVICE THEREOF (VERSIONS) Russian patent published in 2009 - IPC C01B33/21 H05H1/46 

FIELD: chemistry.

SUBSTANCE: mixture of silicon-containing compounds with gas-carrier is fed by the coaxial tube equipped with central electrode with both tube and electrode being made from pure silicon. The central electrode is connected to the potential fan of the high frequency resonance transformer with capacity 1-1000 kW and voltage 10-1000 kV. At temperature 700-9000°C plasma discharge lights up with frequency 1-800 kHz in the jet of silicon-containing compounds between central electrode and coaxial tube walls as well as between central electrode and substrate-target located axisymmetrically to the central electrode.

EFFECT: decrease of energy consumption and of side-products yield during polycrystalline silicon production, enhancing of environmental safety.

113 cl, 8 dwg, 2 ex