METHOD OF PRODUCING FINE-GRAINED SILICON DIOXIDE Russian patent published in 2010 - IPC C01B33/18 

FIELD: chemistry.

SUBSTANCE: fine-grained silicon dioxide is obtained through carbonisation of a sodium silicate solution at temperature 30-50°C with a gaseous mixture containing carbon dioxide being fed at a rate of 10-30 m/s for 45-70 minutes. The obtained suspension is filtered and the silicon dioxide residue obtained after filtration is washed with water and immediately dried at temperature 120 - 140°C to obtain commercial-grade silicon dioxide. The silicon dioxide residue is cleaned with water in a single step. The initial sodium silicate solutions used are solutions which are by-products of processing titanium-silicon concentrates from the Yagersk deposit.

EFFECT: possibility of recycling industrial solutions from production of titanium-silicon concentrates to obtain fine-grained silicon dioxide, reduction of amount of harmful wastes and energy consumption of the process.

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