METHOD OF PRODUCING THIN SILICON LAYERS, THIN SILICON AND USE THEREOF Russian patent published in 2011 - IPC C09D1/00 C08J5/18 B32B25/04 B32B25/20 

Abstract RU 2426756 C2

FIELD: chemistry.

SUBSTANCE: silicon layer is extruded. The silicon layer can be extruded onto a carrier layer or the silicon layer and the carrier layer are extruded together from an extruder bore.

EFFECT: method enables to obtain thin silicon layers in a single step.

40 cl, 3 dwg, 3 ex

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RU 2 426 756 C2

Authors

Mjuller Jozef

Gjunter Val'Ter

Bauehr Mikhel'

Shtark Kurt

Dates

2011-08-20Published

2005-11-25Filed