SELECTIVE AMPLIFIER Russian patent published in 2012 - IPC H03F3/45 

FIELD: radio engineering.

SUBSTANCE: selective amplifier has first and second input transistors, a first resistor, first and second current stabilising two-terminal devices, first and second additional current stabilising two-terminal devices, first and second balancing capacitors, a first additional resistor, first to third additional transistors.

EFFECT: high Q-factor of the amplitude-frequency curve of the selective amplifier and its voltage gain at quasi-resonance frequency f₀ which enables, in some cases, to reduce total power consumption of on-chip systems and produce a high-quality selective device.

5 dwg