SELECTIVE AMPLIFIER WITH PARAPHASE OUTPUT Russian patent published in 2014 - IPC H03F3/45 

FIELD: radio engineering, communication.

SUBSTANCE: in the selective amplifier, the emitter-base junctions of the first (3) and second (5) output transistors are connected in parallel to corresponding additional first (17) and second (18) forward-biased p-n junctions, wherein the first (7) output of the device is connected to the base of the second (4) input transistor through a second (13) capacitor, the base of the second (4) input transistor is connected to the common bus of power sources (19) through a first (20) additional resistor, and the base of the first (3) output transistor is connected to the base of the second (5) output transistor.

EFFECT: low total power consumption owing to a high Q-factor of the amplitude-frequency curve of the amplifier and its voltage gain at quasi-resonance frequency f₀.

4 cl, 19 dwg