FIELD: electricity.
SUBSTANCE: claimed device comprises a source of direct current, voltage stabiliser, Schmitt trigger, integrating RC-circuit, a key, pulse transformer, the first and second differential voltage comparators (DVC), rectifier and filter coupled to the respective load, the first and second parallel RC-circuits, three capacitors, six diodes, six resistors and voltage limiting terminal, at that the key is based on NO gate, which output is the key input while its output is connected to the gate of switching MOS-transistor with n-channel, which drain is the first output of the key, its source is the second output of the key, at that pulse transformed comprises primary winding, n of secondary windings where n=1, 2…, and the second secondary winding.
EFFECT: improving stability of output voltage at load in the wider range of input voltage and ambient temperature values, ensuring short circuit protection in the load both for switching FET transistor with channel of n-type and source of direct current.
2 dwg
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Authors
Dates
2015-02-20—Published
2014-02-24—Filed