SELECTIVE AMPLIFIER BASED ON PLANAR INDUCTANCE WITH LOW Q-FACTOR Russian patent published in 2015 - IPC H03F3/00 

FIELD: radio engineering, communication.

SUBSTANCE: selective amplifier based on planar inductance with low Q-factor includes the first (1) and the second (2) input field transistors; with that, gate of the first (1) input field transistor is connected to input of device (10), and the second (11) power supply bus. Sink of the first (1) input field transistor is connected to the output of device (5) and to the gate of the second (2) input field transistor.

EFFECT: improving Q-factor of resonant amplitude-frequency characteristic of a selective amplifier when using planar inductances with low Q-factors.

5 cl, 12 dwg