SELECTIVE MICROWAVE AMPLIFIER BASED ON LOW Q-FACTOR PLANAR INDUCTOR Russian patent published in 2015 - IPC H03F3/45 

FIELD: radio engineering, communication.

SUBSTANCE: selective microwave amplifier based on a low Q-factor planar inductor further includes a current mirror which is matched with a second power supply bus, the input of which is connected to the drain of a second field-effect transistor, and the output is connected to the gate of the second field-effect transistor and to the device output.

EFFECT: high Q-factor of the resonance frequency response of the selective amplifier when using low Q-factor planar inductors.

14 dwg