CIRCUIT DEVICE FOR CONTROL OF FIELD-EFFECT TRANSISTOR WITH BARRIER LAYER Russian patent published in 2016 - IPC H03K17/284 H03K17/412 

FIELD: electronic equipment.

SUBSTANCE: invention relates to a device for control of field transistor with barrier layer. Circuit device for control of field transistor with barrier layer comprises field-effect transistor, which has a terminal gate and contact source, an exciter, which is configured to generate voltage signal with frequency, also includes a four-terminal element, which is connected with exciter input terminal and connected to the output of the gate output terminal and has a transfer function, which has a pole at odd multiple established frequency.

EFFECT: reduced power losses due to reduced time of transition between phase locking and conductivity field-effect transistor.

10 cl, 6 dwg