CASCODE AMPLIFIER OF TYPE GENERAL DRAIN - GENERAL BASE Russian patent published in 2017 - IPC H03F3/34 

FIELD: radio engineering, communication.

SUBSTANCE: amplifier contains an n-channel field effect transistor with p-n junction and a p-n-p type bipolar transistor, the emitter of which is short-circuited to the source of the field effect transistor, and the collector through the load is galvanically connected to the supply minus, the drain of the FET is connected to the common wire, wherein the gate of the FET, through the impedance of the input circuit, is galvanically connected to the supply minus, and the base of the bipolar transistor is connected to the bias voltage source.

EFFECT: creating a low-power cascode amplifier with low noise performance, simplifying cascading and gain controlling without the need to select the field effect transistors used.

2 dwg