TEM CHAMBER Russian patent published in 2017 - IPC H01P1/00 

Abstract RU 2606173 C1

FIELD: electrical engineering.

SUBSTANCE: invention relates to electrical engineering. Summary of invention is, that TEM-chamber contains pyramid-shaped housing, wherein in cross-section housing central and convergent parts are rectangle with sides aspect ratio of 1:1.15, wherein central part length is equal to its width, and converging parts are made with linear narrowing angles of 32.7° and 36.7°, which open ends have size of 7.2×8.4 mm and bends for connection with tightening ring along longitudinal component, which is made in form of cylinder with rectangular inside cutout and sides aspect ratio of 1:1.15, at which edges at least four holes with threaded joint are arranged for connection of holder for connector by means of screws through current-conducting paste, which also has cylindrical shape with at least four threaded holes and at least five holes for high-frequency connector, four of which are made with identical diameter, and fifth is made in form of coaxial waveguide with wave impedance of 50 Ohm, which central conductor is connected with central plate by soldering and finger joint connection, which is made of conducting material with thickness of 2 mm and width of 1:1.3 relative to width of housing central part, and at central plate ends linear narrowing with stepped cuts on edges is made in form of arc, wherein at beginning narrowing is made at angle of 46° at distance of tightening ring thickness and at an angle of 61° at distance from tightening ring thickness to 5.5 mm, exceeding housing ribs arrangement, in one of walls of which rectangular cutout is arranged, which edges are made with chamfer at angle of 45°, for test table from conducting material, which has, at least, one hole for connector and chamfer at angle of 45°. Chamber has maximum operating frequency in range from 1 to 2 GHz at tested object maximum height in range from 40 to 20 mm and maximum standing-wave factor by voltage not exceeding 1.08 (modulus of reflection coefficient, does not exceed minus 22 dB).

EFFECT: obtaining chamber maximum operating frequency in range from 1 to 2 GHz.

1 cl, 6 dwg

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RU 2 606 173 C1

Authors

Komnatnov Maksim Evgenevich

Gazizov Talgat Rashitovich

Dates

2017-01-10Published

2015-12-28Filed