FIELD: electronic equipment.
SUBSTANCE: invention relates to semiconductor electronics and can be used for evaluation of power transistors, diodes, thyristors by voltage both during their production, and in operating conditions. Substance of the invention consists in the fact that in the method of determining the limiting value of the blocking voltage of power transistors on the tested semiconductor transistor, which is connected according to the scheme with a common base or gate, test voltages are supplied with a linearly increasing value in time. Test voltage has the shape of a sequence of sinusoidal unipolar pulses with increasing amplitude and frequency of up to several kilohertz, and the value of the blocking voltage on the transistor is measured when the output voltage of the peak current detector of leakage of the power transistor has a predetermined value, after which the test voltage is removed from the transistor.
EFFECT: invention reduces measurement time, increases accuracy of determining the limiting value of blocking voltage, provides protection of the transistor from breakdown during measurements.
1 cl, 2 dwg
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Authors
Dates
2019-07-09—Published
2018-12-21—Filed