INSTALLATION FOR DETERMINATION OF THE CLASS OF POWER SEMICONDUCTOR DEVICES Russian patent published in 2023 - IPC G01R31/26 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of electrical engineering and can be used in devices for measuring the parameters of power semiconductor devices. The effect is ensured due to the fact that the outputs of all key elements 3 are interconnected, with one of the inputs of the differential amplifier 14 and with one of the outputs of the secondary winding of the booster transformer 16. Each output of the control unit of the key elements 12 is connected to the control input of the corresponding key element 3 The second input of the differential amplifier 14 and the input of the key element control unit 12 are connected to the output of the reference sinusoidal signal generator 13, and the output of the differential amplifier 14 is connected to one of the inputs of the power amplifier 15. The primary winding of the voltage boost transformer 16 is connected to the output of the power amplifier 15, and the second the output of its secondary winding is connected to the second input of the power amplifier 15 and the primary winding of the step-up transformer 4. One of the outputs of the secondary winding of the step-up transformer 4 through the rectifier 5 and the polarity switching switches 6 is connected to the first contact for connection of the tested semiconductor device 11.1, and the second output of the secondary winding of the step-up transformer 4 is connected to the second contact for connecting the tested semiconductor device 11.2 through the current sensor 9. Parallel to the contacts for connecting the tested semiconductor device 11.1 and 11.2, a voltage divider 10 is connected. Measuring outputs of the current sensor 9 and the divider voltage 10 is connected to the inputs of the measurement unit 8, the outputs of the control unit 7 are connected to the control inputs of the polarity switching switches 6, and the additional output of the control unit 6 is connected to the input of the generator of the reference sinusoidal signal 13.

EFFECT: invention provides the possibility of generating high-voltage pulses with a shape close to an ideal sinusoid, with smooth adjustment and high accuracy of setting the amplitude, which increases the accuracy of determining the class of power semiconductor devices.

1 cl, 1 dwg