DIELECTRIC COMPOSITION WITH LOW K FOR APPLICATIONS AT HIGH FREQUENCIES Russian patent published in 2019 - IPC C03C3/04 C04B35/14 C03C4/16 

FIELD: manufacturing technology.

SUBSTANCE: disclosed is sintered dielectric material, method of forming sintered dielectric material, as well as electronic component containing sintered dielectric material. Dielectric material contains, before annealing, part of solid substances containing 10–95 wt% or 10–99 wt% of amorphous or crystalline quartz powder, and 5–90 wt% or 1–90 wt% of glass component. Glass component contains 50–90 mol.% of SiO₂, 5–35 mol.% or 0.1–35 mol.% of B₂O₃, 0.1–10 mol.%. or 0.1–25 mol.% of Al₂O₃, 0.1–10 mol.% of K₂O, 0.1–10 mol.% of Na₂O, 0.1–20 mol.% of Li₂O, 0.1–30 mol.% of F. Sum of Li₂O+Na₂O+K₂0 is 0.1–30 mol.% of glass component. Material can be burnt at temperature below 1,100 °C.

EFFECT: obtaining material with dielectric constant K less than 8 and Q-factor greater than 500 at 10–30 GHz.

17 cl, 10 dwg, 5 tbl, 4 ex