FIELD: computer engineering. SUBSTANCE: circuit of amplifier of recording-reading includes four kinds of MIS transistors different in values of threshold voltages: U01= 0 ± 0,2B - transistors with zero threshold; U02= 0,6 ± 0,2B - enhancement-mode transistors of first kind; U03= 1,0 ± 0,2B - enhancement-mode transistors of second kind; U04= -3,25 ± 0,75B - transistors with depletion. Formation of first kind of transistors with enhancement is conducted simultaneously with doping of channels of storage cells of matrix storage circuit to obtain higher transconductance. Formation of second kind of enhancement-mode transistors is influenced by provision for higher reliability of circuit of recording amplifier under condition of programming of input information with input normalized levels U
Title | Year | Author | Number |
---|---|---|---|
VERSIONS OF READING AMPLIFIER | 0 |
|
SU1137923A1 |
METAL-OXIDE-SEMICONDUCTOR TRANSISTOR-BASED READ-OUT AMPLIFIER | 0 |
|
SU883968A1 |
VERSIONS OF BUFFER AMPLIFIER | 0 |
|
SU1112409A1 |
ADDRESS DECODER FOR SEMICONDUCTOR READ-ONLY MEMORY | 0 |
|
SU960949A1 |
READING AMPLIFIER BASED ON COMPIMENTARY INSULATED-GATE FIELD-EFFECT TRANSISTORS | 0 |
|
SU1062785A1 |
READING AMPLIFIER | 0 |
|
SU1134965A1 |
READOUT AMPLIFIER | 0 |
|
SU928406A1 |
OUTPUT BUFFER UNIT | 0 |
|
SU908230A1 |
READING-OUT AMPLIFIER FOR INTEGRAL STORAGE DEVICE | 0 |
|
SU888206A1 |
ADDRESS SHAPER BUILT AROUND MIS TRANSISTORS | 1991 |
|
RU2088979C1 |
Authors
Dates
1994-12-30—Published
1987-06-01—Filed