HIGH-VOLTAGE TRANSISTOR SWITCH Russian patent published in 1994 - IPC

FIELD: pulse technology. SUBSTANCE: high-voltage transistor switch has n-p-n transistor 1 whose base is connected to bias voltage terminal, n-channel MIS transistor 2 whose drain is connected to emitter of n-p-n transistor 1, and capacitor 3 whose first plate is connected to source of MIS transistor and to common bus; in addition it is provided with optic coupler built up of light-emitting diode 4 and photodiode 5, Schottky-barrier diode 6 and resistor 7 whose first lead is connected to control terminals and to light-emitting diode cathode whose anode is connected to second lead of resistor and to MIS transistor gate, its substrate being connected to second plate of capacitor and to Schottky-barrier diode anode; diode cathode is connected to cathode of photodiode whose anode is connected to common bus. EFFECT: improved reliability. 1 dwg