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2 007 860

(13)

C1

(51)

IPC

(21) (22)

Application

4859806/21, 1990-06-14

(22)

Actual filing date

1990-06-14

(45)

Published

1994-02-15

(72)

Inventor

Shadrin A.V.

(73)

Holder

Rossijskij Federal'Nyj Jadernyj Tsentr Vserossijskij Nauchno-Issledovatel'Skij Institut Tekhnicheskoj Fiziki

BRIDGE-BASED DIODE COMMUTATOR Russian patent published in 1994 - IPC

Abstract RU 2007860 C1

FIELD: pulse technics. SUBSTANCE: device has two diode bridges 1 and 2, two power supplies 3 and 4, four jumpers 7, 10, 12, 14, four resistors 5, 8, 11 and 13, two chokes, four capacitors 15, 16, 18 and 20, loading 19. EFFECT: increased functional capabilities.

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RU 2 007 860 C1

Authors

Shadrin A.V.

Dates

1994-02-15—Published

1990-06-14—Filed

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