METHOD OF CHECKING QUALITY OF CONTACT OF OUTPUTS OF KMOS-LSI AND DEVICE FOR REALIZATION Russian patent published in 1994 - IPC

FIELD: electric engineering. SUBSTANCE: checking of quality of contact is performed by means of application of specific current pulse sequence to specific outputs of object under testing. To detect outputs of KMOS-LSI which have no contacts the output of voltage/current converter which is connected to output which connects voltage of object under control. Current pulses are applied in such a manner that ordinal number of the pulse should correspond to number of output. Device for checking quality of contacts of outputs of KMOS-LSI has control unit 1, multichannel control unit 2, commutation unit 3, reference levels source 4, power supply 5, commutation member 6, registration unit 7, voltage/current converter 8. EFFECT: improved reliability of operation. 4 dwg