METHOD OF SILICON BASE METAL COATING Russian patent published in 1994 - IPC

FIELD: electronics. SUBSTANCE: method provides for application of metal coating on a base by vacuum evaporation under the base temperature of no more than 80 C in gas medium with carbon content of not less than 5 % by volume and oxygen content of no more than 1 % by volume. The base temperature in process of metal coating must be chosen not less than 0 C. EFFECT: method simplifies process of metal coating in terms of high adhesion of formed metal film to the base, prevents deep relative diffusion of film and base materials, increases quality of solid state pieces. 2 cl, 2 dwg