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(19)

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(11)

2 012 171

(13)

C1

(51)

IPC

(21) (22)

Application

5021060/21, 1992-01-04

(22)

Actual filing date

1992-01-04

(45)

Published

1994-04-30

(72)

Inventor

Gvozdev V.V.Vrublevskij I.A.

(73)

Holder

Nauchno-Issledovatel'Skij Ehlektromekhanicheskij Institut

INTEGRATED CIRCUIT SUBSTRATE Russian patent published in 1994 - IPC

Abstract RU 2012171 C1

FIELD: manufacture of hybrid integrated circuits in microelectronics. SUBSTANCE: stiffness component in the form of porous aluminium oxide frame is formed on screen side of base over its perimeter; frame width depends on predetermined sag and can be found from equation given in description of invention. EFFECT: provision for desired planarization of substrate, reduced probability of formation of cracks. 2 dwg, 1 tbl

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RU 2 012 171 C1

Authors

Gvozdev V.V.

Vrublevskij I.A.

Dates

1994-04-30—Published

1992-01-04—Filed

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