POWER AMPLIFIER Russian patent published in 1994 - IPC

FIELD: radio engineering. SUBSTANCE: power amplifier has first and second MIS transistors with induced n-channel connected in agreement with push-pull circuit. To their gates leads of secondary winding of input transformer are connected, its midpoint is linked through sources of transistors to common wire. Sources of transistors are connected to leads-out of primary winding of output transformer. In each channel there are placed supplementary secondary winding of input transformer and first diode connected in series between gate of transistor and its base as well as second diode and resistor also connected in series. Anodes of diodes are coupled to gate of transistor and its base correspondingly. EFFECT: improved operational characteristics. 1 dwg